• DocumentCode
    528373
  • Title

    Transverse optical confinement in zinc silicate nanocrystalline layer

  • Author

    Yang, H.Y. ; Yu, S.F. ; Lau, S.P.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2010
  • fDate
    5-9 July 2010
  • Firstpage
    534
  • Lastpage
    535
  • Abstract
    Transverse optical confinement in zinc oxide (ZnO) random cavities on Si substrate is achieved by a self-generated zinc silicate (Zn2SiO4) layer formed between the interface of ZnO and Si after thermal annealing.
  • Keywords
    II-VI semiconductors; annealing; interface structure; nanofabrication; nanostructured materials; optical materials; photoluminescence; self-assembly; semiconductor growth; voids (solid); wide band gap semiconductors; zinc compounds; Si; Si substrate; Zn2SiO4; ZnO-Si; emission spectrum; interface phenomena; self-generated zinc silicate layer; thermal annealing; transverse optical confinement; zinc oxide random cavities; zinc silicate nanocrystalline layer; Annealing; Optical films; Optical reflection; Silicon; Substrates; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    OptoElectronics and Communications Conference (OECC), 2010 15th
  • Conference_Location
    Sapporo
  • Print_ISBN
    978-1-4244-6785-3
  • Type

    conf

  • Filename
    5588585
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=528373