• DocumentCode
    528798
  • Title

    A 65nm CMOS low-power, low-voltage bandgap reference with using self-biased composite cascode opamp

  • Author

    Koushaeian, Leila ; Skafidas, Stan

  • Author_Institution
    Centre for Telecommunications and Micro-Electronics (CTME), Melbourne, Australia
  • fYear
    2010
  • fDate
    18-20 Aug. 2010
  • Firstpage
    95
  • Lastpage
    98
  • Abstract
    In this paper, we present a low-voltage low-power CMOS bandgap voltage reference (BVR) based on the self-cascode self-biased op-amp. The current mirror mismatch error resulting from the channel length modulation (CLM) effect has also been compensated by using composite transistors. This proposed circuit, implemented in 65nm IBM CMOS process, which generates a reference of 364mV from a power supply of the 1.2V and consumed the 28 μW at room temperature. The power supply rejection ratio is greater than 60 dB for frequency below 10 kHz. The proposed bandgap achieves a temperature coefficient(TC) of 4.7ppm/°C without trimming for the temperature range(TR) from 0°C to 100°C and the 0.75mV/V of ±10% supply voltage variations.
  • Keywords
    CMOS integrated circuits; CMOS technology; Gain; Photonic band gap; Power supplies; Temperature distribution; Transistors; Self-cascode; bandgap voltage reference; self-biased; temperature coefficient; voltage reference;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Low-Power Electronics and Design (ISLPED), 2010 ACM/IEEE International Symposium on
  • Conference_Location
    Austin, TX, USA
  • Print_ISBN
    978-1-4244-8588-8
  • Type

    conf

  • Filename
    5599020