DocumentCode
528798
Title
A 65nm CMOS low-power, low-voltage bandgap reference with using self-biased composite cascode opamp
Author
Koushaeian, Leila ; Skafidas, Stan
Author_Institution
Centre for Telecommunications and Micro-Electronics (CTME), Melbourne, Australia
fYear
2010
fDate
18-20 Aug. 2010
Firstpage
95
Lastpage
98
Abstract
In this paper, we present a low-voltage low-power CMOS bandgap voltage reference (BVR) based on the self-cascode self-biased op-amp. The current mirror mismatch error resulting from the channel length modulation (CLM) effect has also been compensated by using composite transistors. This proposed circuit, implemented in 65nm IBM CMOS process, which generates a reference of 364mV from a power supply of the 1.2V and consumed the 28 μW at room temperature. The power supply rejection ratio is greater than 60 dB for frequency below 10 kHz. The proposed bandgap achieves a temperature coefficient(TC) of 4.7ppm/°C without trimming for the temperature range(TR) from 0°C to 100°C and the 0.75mV/V of ±10% supply voltage variations.
Keywords
CMOS integrated circuits; CMOS technology; Gain; Photonic band gap; Power supplies; Temperature distribution; Transistors; Self-cascode; bandgap voltage reference; self-biased; temperature coefficient; voltage reference;
fLanguage
English
Publisher
ieee
Conference_Titel
Low-Power Electronics and Design (ISLPED), 2010 ACM/IEEE International Symposium on
Conference_Location
Austin, TX, USA
Print_ISBN
978-1-4244-8588-8
Type
conf
Filename
5599020
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