DocumentCode :
528798
Title :
A 65nm CMOS low-power, low-voltage bandgap reference with using self-biased composite cascode opamp
Author :
Koushaeian, Leila ; Skafidas, Stan
Author_Institution :
Centre for Telecommunications and Micro-Electronics (CTME), Melbourne, Australia
fYear :
2010
fDate :
18-20 Aug. 2010
Firstpage :
95
Lastpage :
98
Abstract :
In this paper, we present a low-voltage low-power CMOS bandgap voltage reference (BVR) based on the self-cascode self-biased op-amp. The current mirror mismatch error resulting from the channel length modulation (CLM) effect has also been compensated by using composite transistors. This proposed circuit, implemented in 65nm IBM CMOS process, which generates a reference of 364mV from a power supply of the 1.2V and consumed the 28 μW at room temperature. The power supply rejection ratio is greater than 60 dB for frequency below 10 kHz. The proposed bandgap achieves a temperature coefficient(TC) of 4.7ppm/°C without trimming for the temperature range(TR) from 0°C to 100°C and the 0.75mV/V of ±10% supply voltage variations.
Keywords :
CMOS integrated circuits; CMOS technology; Gain; Photonic band gap; Power supplies; Temperature distribution; Transistors; Self-cascode; bandgap voltage reference; self-biased; temperature coefficient; voltage reference;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low-Power Electronics and Design (ISLPED), 2010 ACM/IEEE International Symposium on
Conference_Location :
Austin, TX, USA
Print_ISBN :
978-1-4244-8588-8
Type :
conf
Filename :
5599020
Link To Document :
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