A computerized method for carrier lifetime measurement in PN junctions at high and low-level injection

Author

Montero, Sebastián ; Cedola, A.P. ; Cappelletti, Marcelo A. ; Blancá, Eitel L Peltzer Y

Author_Institution

Dept. de Electrotecnia, Univ. Nac. de La Plata, La Plata, Argentina

fYear

2010

fDate

1-9 Oct. 2010

Firstpage

87

Lastpage

93

Abstract

A system to determine the minority carrier lifetime in PN semiconductor junctions in the range of 50 ns to 100 μs has been developed. The measurement is performed by using the Open Circuit Voltage Decay (OCVD) technique. The equipment consists mainly of a data acquisition system based on a PIC16F877A microcontroller, connected to a computer, and software for the control of the entire system, data processing, storage and visualization of results.

Keywords

data acquisition; electronic engineering computing; measurement systems; microcontrollers; p-n junctions; PIC16F877A microcontroller; PN semiconductor junctions; carrier lifetime measurement; computerized method; data acquisition system; data processing; data storage; data visualization; high-level injection; low-level injection; open circuit voltage decay technique; time 50 ns to 100 mus; Charge carrier lifetime; Converters; Current measurement; Junctions; Radiative recombination; Semiconductor device measurement; Voltage measurement; Carrier lifetime; OCVD technique; experimental measurement; microcontroller;

fLanguage

English

Publisher

ieee

Conference_Titel

Argentine School of Micro-Nanoelectronics Technology and Applications (EAMTA), 2010

Conference_Location

Montevideo

Print_ISBN

978-1-4244-6747-1

Electronic_ISBN

978-987-1620-14-2

Type

conf

Filename

5606367