Improved measurement-based extraction algorithm of a comprehensive extrinsic element network for large-size GaN HEMTs

This paper presents an algorithm for extrinsic element extraction of GaN-HEMTs with physically meaningful parameters calculated from S-parameters measurements at pinch-off. An improved algorithm to extract a 12-element parasitic network is presented, which allows proper modelling of the complex parasitic effects present in devices with large gate periphery. The extraction algorithm is found on a novel way to scan of the best extrinsic capacitance distribution, clear insight of the new supporting considerations of this scan is presented, as well as their derivation and physical interpretation. Results of the algorithm application with measured data of a 3.2-mm gate-periphery GaN HEMT successfully confirm its consistency.