Determination of suitable mHEMT transistor dimensioning for power amplification at 210 GHz by comprehensive measurements

The properties of various mHEMT technologies and their advantages for millimeter-wave (mmW) power amplification are presented. An experimental determination of the most suitable transistor technology (i.e. gate-length), transistor size (i.e. number of gate-fingers and gate-width) and transistor bias is taken. The advantages of the different technologies are pointed out. The most suitable combination of gate-length, number of fingers, gate-width and bias for obtaining maximum gain, maximum output power and maximum power added efficiency at a given frequency of 210 GHz is determined.