A 6–9GHz Ultra-Wideband CMOS differential LNA for China UWB standard

Author

Zhendong, Gao ; Zhiqiang, Li ; Haiying, Zhang

Author_Institution

Inst. of Microelectron., Chinese Acad. of Sci., Beijing, China

Volume

1

fYear

2010

fDate

20-23 Sept. 2010

Firstpage

1

Lastpage

4

Abstract

A 6-9GHz Ultra-Wideband (UWB) CMOS differential low noise amplifier (LNA) for the high frequency band of China UWB standard is proposed. Compared with the conventional band-pass filter wideband input matching, the number of inductors is saved by the high-pass filter topology presented. The virtual ground of the differential LNA formed at the `tail´ removes the sensitivity to parasitic ground inductance. The LNA is designed and fabricated with Chartered 0.18μm 1P6M CMOS technology. The implemented LNA achieves a maximum power gain of 13.8dB, and a noise figure of 5.49-6.95dB during 6-9GHz. The LNA including buffers dissipates a total power of 29mW from the 1.8 V power supply. Chip size is 1.7mm×1.5mm.

Keywords

low noise amplifiers; ultra wideband communication; China UWB standard; high-pass filter topology; low noise amplifier; parasitic ground inductance; ultra-wideband CMOS differential; Band pass filters; CMOS integrated circuits; CMOS technology; Impedance matching; Transmission line measurements; Ultra wideband technology; Wideband; Low noise amplifier (LNA); differential; ultra-wideband (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Ultra-Wideband (ICUWB), 2010 IEEE International Conference on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-5305-4

Electronic_ISBN

978-1-4244-5306-1

Type

conf

DOI

10.1109/ICUWB.2010.5614230

Filename

5614230