• DocumentCode
    531041
  • Title

    A SPDT switch in a standard 45 nm CMOS process for 94 GHz Applications

  • Author

    Quémerais, T. ; Moquillon, L. ; Fournier, J-M ; Benech, P.

  • Author_Institution
    IMEP-LHAC, UMR INPG/UJF/US/CNRS, Grenoble, France
  • fYear
    2010
  • fDate
    28-30 Sept. 2010
  • Firstpage
    425
  • Lastpage
    428
  • Abstract
    A fully integrated single-pole double-throw (SPDT) transmit/receive switch (T/R switch) is implemented on a standard 45nm CMOS process. This circuit is dedicated to fully integrated CMOS RF front end modules operating at 94 GHz. The traveling-wave topology was used to minimize the insertion loss at millimeter wave frequencies. The switch exhibits a measured insertion loss of 5.3 dB, an isolation of 20.5 dB, and a return loss at Tx/Rx port of -12 dB at 94 GHz. An input 1dB compression point higher than 11 dBm is measured at 60 GHz and 15 dBm at 94 GHz after simulation. Excellent agreement between measurement and simulation results is observed.
  • Keywords
    CMOS integrated circuits; microwave switches; millimetre waves; CMOS RF front end module; SPDT switch; frequency 60 GHz; frequency 94 GHz; insertion loss; millimeter wave frequencies; single-pole double-throw transmit/receive switch; size 45 nm; traveling-wave topology; CMOS integrated circuits; CMOS process; Insertion loss; Loss measurement; Metals; Switches; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference (EuMC), 2010 European
  • Conference_Location
    Paris
  • Print_ISBN
    978-1-4244-7232-1
  • Type

    conf

  • Filename
    5614766