DocumentCode
531041
Title
A SPDT switch in a standard 45 nm CMOS process for 94 GHz Applications
Author
Quémerais, T. ; Moquillon, L. ; Fournier, J-M ; Benech, P.
Author_Institution
IMEP-LHAC, UMR INPG/UJF/US/CNRS, Grenoble, France
fYear
2010
fDate
28-30 Sept. 2010
Firstpage
425
Lastpage
428
Abstract
A fully integrated single-pole double-throw (SPDT) transmit/receive switch (T/R switch) is implemented on a standard 45nm CMOS process. This circuit is dedicated to fully integrated CMOS RF front end modules operating at 94 GHz. The traveling-wave topology was used to minimize the insertion loss at millimeter wave frequencies. The switch exhibits a measured insertion loss of 5.3 dB, an isolation of 20.5 dB, and a return loss at Tx/Rx port of -12 dB at 94 GHz. An input 1dB compression point higher than 11 dBm is measured at 60 GHz and 15 dBm at 94 GHz after simulation. Excellent agreement between measurement and simulation results is observed.
Keywords
CMOS integrated circuits; microwave switches; millimetre waves; CMOS RF front end module; SPDT switch; frequency 60 GHz; frequency 94 GHz; insertion loss; millimeter wave frequencies; single-pole double-throw transmit/receive switch; size 45 nm; traveling-wave topology; CMOS integrated circuits; CMOS process; Insertion loss; Loss measurement; Metals; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference (EuMC), 2010 European
Conference_Location
Paris
Print_ISBN
978-1-4244-7232-1
Type
conf
Filename
5614766
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