High power, fully integrated SMT amplifiers with +47dBm OIP3 at 15GHz and 6W, 38% efficiency at 30GHz using low cost, high volume PHEMT

Author

Morkner, Henrik ; Fujii, Kohei ; Ostermann, Brent

fYear

2010

fDate

28-30 Sept. 2010

Firstpage

1654

Lastpage

1657

Abstract

The system power amplifier´s linearity sets the maximum bit rate and the efficiency determines the maximum output power possible given a fixed heat dissipation or DC supply. This paper demonstrates that using a GaAs PHEMT 0.15μm gate process, industry leading performance can be attained. Shown is a 15GHz linear power amplifier capable of - 52dBc IM3 at 21dBm output power (+47dBm OIP3). Also demonstrated is a 30GHz saturated power amplifier capable of making 38dBm (6W) output power at 38% peak power added efficiency. Both are fully matched to 50 Ω and have over 20dB of gain. Both are housed in a low cost laminate surface mount package.

Keywords

III-V semiconductors; MMIC power amplifiers; cooling; field effect MMIC; gallium arsenide; high electron mobility transistors; surface mount technology; DC supply; GaAs; PHEMT gate process; frequency 15 GHz; frequency 30 GHz; fully integrated SMT amplifiers; heat dissipation; high power SMT amplifiers; laminate surface mount packaging; linear power amplifier; power 6 W; resistance 50 ohm; saturated power amplifier; size 0.15 mum; FET Amplifiers; HEMT; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7232-1

Type

conf

Filename

5616505