DocumentCode :
531641
Title :
A new multi-harmonic and bilateral behavioral model taking into account short term memory effect
Author :
Demenitroux, W. ; Maziere, C. ; Gasseling, Tony ; Gustavsen, Bjorn ; Campovecchio, M. ; Quere, R.
Author_Institution :
AMCAD Eng., Limoges, France
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
473
Lastpage :
476
Abstract :
This paper presents a new macro modeling methodology for solid-state amplifiers (SSAs) or packaged transistors used in communication systems. The model topology is based on the principle of the harmonic superposition recently introduced by the Agilent X-parameters(TM) combined with dynamic Volterra theory. The model results on a Multi-harmonics Bilateral model which handles short-term memory effects. In this work, the behavioral model developed was extracted from time domain load pull measurement performed on one amplifier. Then, the model was used for the simulation of the amplifier´s response using a two tones and a CW signal under moderate mismatched load operating conditions.
Keywords :
Volterra equations; amplifiers; transistors; Agilent X-parameters; CW signal; bilateral behavioral model; communication system; dynamic Volterra theory; harmonic superposition; macro modeling; mismatched load operating condition; model topology; multiharmonic behavioral model; multiharmonics bilateral model; packaged transistors; short term memory effect; solid-state amplifier; time domain load pull measurement; Behavioral model; Complex Envelope; Non linear memory; SSA;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616612
Link To Document :
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