DocumentCode :
531666
Title :
New small-signal modelling method for W-band MHEMT-based amplifier design
Author :
Moon, Sung-Woon ; Baek, Yong-Hyun ; Oh, Jung-Hun ; Han, Min ; Rhee, Jin Koo ; Kim, Sam Dong
Author_Institution :
Millimeter-wave INnovation Technol. Res. Center (MINT), Dongguk Univ., Seoul, South Korea
fYear :
2010
fDate :
28-30 Sept. 2010
Firstpage :
1146
Lastpage :
1149
Abstract :
An efficient and practical technique for the small-signal modelling of the GaAs-based 0.1-μm metamorphic high electron mobility transistors (MHEMTs) is proposed and applied to realize the W-band (75 ~ 110 GHz) millimeter-wave monolithic integrated circuit (MMIC) amplifiers. The modelling technique adopts the gradient optimizer with the initial values of parameter set, which are determined from the measurements under the cold FET condition avoiding the forward gate-biasing, to improve the modelling accuracy at W-band frequencies. MMIC amplifiers designed and fabricated based on the proposed small-signal modelling method show the gain of ~10 dB at 94 GHz, and the measurements show an excellent agreement with simulation data in our design frequency range.
Keywords :
field effect MIMIC; high electron mobility transistors; integrated circuit design; millimetre wave amplifiers; MMIC; W-band MHEMT-based amplifier design; forward gate-biasing; frequency 75 GHz to 100 GHz; metamorphic high electron mobility transistors; millimeter-wave monolithic integrated circuit amplifiers; size 0.1 mum; small-signal modelling method;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2010 European
Conference_Location :
Paris
Print_ISBN :
978-1-4244-7232-1
Type :
conf
Filename :
5616646
Link To Document :
بازگشت