GaN based power amplifiers for broadband applications from 2 GHz to 6 GHz

Author

Sledzik, H. ; Reber, R. ; Bunz, B. ; Schuh, P. ; Oppermann, M. ; Musser, M. ; Seelmann-Eggebert, M. ; Quay, R.

Author_Institution

Defence Electron., EADS Deutschland GmbH, Ulm, Germany

fYear

2010

fDate

28-30 Sept. 2010

Firstpage

1658

Lastpage

1661

Abstract

A hybrid power amplifier building block and a power amplifier module from 2 GHz to 6 GHz were designed, fabricated and measured. These power amplifiers are all based on AlGaN/GaN HEMT technology. The future applications for these types of power amplifiers are mainly electronic warefare (EW) applications. Novel communication jammers and especially active electronically scanned array EW systems have a high demand for broadband high power amplifiers. Output power levels with a peak value of 90 W at lower frequencies and more than 40 W up to 6 GHz are measured. With these power amplifiers novel EW system approaches can be investigated.

Keywords

III-V semiconductors; MMIC power amplifiers; UHF power amplifiers; aluminium compounds; field effect MMIC; gallium compounds; high electron mobility transistors; microwave power amplifiers; wide band gap semiconductors; wideband amplifiers; AlGaN-GaN; HEMT technology; active electronically scanned array EW systems; broadband applications; communication jammers; electronic warfare applications; frequency 2 GHz to 6 GHz; hybrid power amplifier building block; output power levels; power amplifier module; power amplifiers; Broadband amplifiers; Frequency measurement; Gain; Gallium nitride; Power amplifiers; Substrates; AlGaN/GaN; HPA; broadband power amplifier; power amplifier module;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2010 European

Conference_Location

Paris

Print_ISBN

978-1-4244-7232-1

Type

conf

Filename

5616989