DocumentCode :
533091
Title :
Optimizing techniques for charge injection effect of pixels in CMOS image sensor
Author :
Zheng, Ran ; Wei, Tingcun ; Gao, Deyuan ; Li, Feng ; Zeng, Huiming
Author_Institution :
Embedded Syst. Integration Minist. of Educ., Eng. Res. Center, Xi´´an, China
Volume :
10
fYear :
2010
fDate :
22-24 Oct. 2010
Abstract :
Analysis on the charge injection effect of the pixels in CMOS image sensor is discussed and the optimizing techniques for the effect is proposed in this paper. The pixel consists of a Pinned-Diode and several MOS switches with large size, which causes severe charge injection during normal pixel operations. Analysis on the dynamic range of the Pinned- Diode (PD), node reset, exposure signal-reading aiming at charge injection effect is implemented, based on which, optimizing techniques for the effect by employing appropriate time sequence and suitable voltages/controlling signals are proposed. The dynamic range of PD is improved by 26% and the charge injection effect on FD (Floating-Diffusion) node is suppressed by 80%.
Keywords :
CMOS image sensors; charge injection; p-i-n diodes; CMOS image sensor; MOS switch; charge injection effect; exposure signal-reading; floating-diffusion node; image pixels; node reset; optimizing techniques; pinned-diode switch; time sequence; Pixel; APS; CMOS image sensor; charge injection; pixel;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Application and System Modeling (ICCASM), 2010 International Conference on
Conference_Location :
Taiyuan
Print_ISBN :
978-1-4244-7235-2
Electronic_ISBN :
978-1-4244-7237-6
Type :
conf
DOI :
10.1109/ICCASM.2010.5622800
Filename :
5622800
Link To Document :
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