Influence of the process sequence and thermal budget on the strain of Si:C stressor layers formed by ion implantation

Author

Rosseel, Erik ; Ortolland, Claude ; Hikavyy, Andriy ; Schram, Tom ; Falepin, Anneltes ; Hoffmann, T. ; Douhard, Bastien ; Moussa, Alain ; Vandervors, Wilfried ; Ameen, Mike ; Rubin, Leonard

Author_Institution

IMEC, Leuven, Belgium

fYear

2010

fDate

Sept. 28 2010-Oct. 1 2010

Firstpage

32

Lastpage

40

Abstract

We have studied n+ Si:C stressor formation by C or C₇H₇ ion implantation on blanket wafers for different integration schemes (so-called post Source/Drain versus post Source/Drain Extension integration). Using sheet resistance and High Resolution X-Ray Diffraction (HR-XRD) fitting parameters as the main metrics, we studied the influence of different implant/anneal parameters as well as the process sequence itself. For both integration schemes, suitable processing conditions were identified which result in acceptable sheet resistance and strain levels.

Keywords

X-ray diffraction; annealing; carbon; elemental semiconductors; ion implantation; silicon; HRXRD; Si:C; annealing parameter; blanket wafer; fitting parameter; high resolution X-ray diffraction; integration scheme; ion implantation; sheet resistance; strain level; stressor formation; stressor layer; thermal budget; Annealing; Atomic measurements; Electrical resistance measurement; Implants; Random access memory; Resistance; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors (RTP), 2010 18th International Conference on

Conference_Location

Gainesville, FL

ISSN

1944-0251

Print_ISBN

978-1-4244-8400-3

Type

conf

DOI

10.1109/RTP.2010.5623702

Filename

5623702