DocumentCode
533339
Title
The relevance of long-duration TLP stress on system level ESD design
Author
Boselli, Gianluca ; Salman, Akram ; Brodsky, Jonathan ; Kunz, Hans
Author_Institution
Analog Technol. Dev. ESD Lab., Texas Instrum. Inc., Dallas, TX, USA
fYear
2010
fDate
3-8 Oct. 2010
Firstpage
1
Lastpage
10
Abstract
An analysis of long-duration TLP stress will be performed on ESD clamps representative of the mo commonly used ESD protection strategies. It will be shown that snapback-based High Voltage devices feature static filamentary conduction after triggering. This leads to failure for TLP pulse widths in excess of 100ns, we below the expected power scaling levels. The need for long TLP testing to establish ESD protection robustness in the system level stress regime will be demonstrated.
Keywords
electrostatic discharge; ESD clamps; ESD protection strategies; long-duration TLP stress; snapback-based high voltage devices; static filamentary conduction; system level ESD design; Clamps; Electrostatic discharge; FETs; Fitting; Metals; Stress; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location
Reno, NV
Print_ISBN
978-1-58537-182-2
Electronic_ISBN
978-1-58537-182-2
Type
conf
Filename
5623705
Link To Document