DocumentCode
533341
Title
A novel physical model for the SCR ESD protection device
Author
Romanescu, Alexandru ; Fonteneau, Pascal ; Legrand, Charles-Alexandre ; Ferrari, Philippe ; Arnould, Jean-Daniel ; Manouvrier, Jean-Robert ; Beckrich-Ros, Helene
Author_Institution
ST Microelectron., Crolles, France
fYear
2010
fDate
3-8 Oct. 2010
Firstpage
1
Lastpage
10
Abstract
The SCR (silicon controlled rectifier) is one of the most efficient ESD protection devices. In order to improve the accuracy, convergence, scalability, and the parameter extraction and support time, a new model was developed. It aims to reach its goals through a stronger relation between the physical phenomena and its constitutive equations. The compact model was validated in CMOS 40 nm and CMOS 130 nm technologies.
Keywords
CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; thyristors; CMOS technology; SCR ESD protection device; parameter extraction; physical model; silicon controlled rectifier; size 130 nm; size 40 nm; Capacitance; Mathematical model; Parameter extraction; Resistance; Semiconductor device modeling; Thyristors; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location
Reno, NV
Print_ISBN
978-1-58537-182-2
Electronic_ISBN
978-1-58537-182-2
Type
conf
Filename
5623708
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