Improved ESD protection in advanced FDSOI by using hybrid SOI/bulk Co-integration

Author

Benoist, Thomas ; Fenouillet-Beranger, Claire ; Guitard, Nicolas ; Huguenin, Jean-Luc ; Monfray, Stéphane ; Galy, Philippe ; Buj, Christel ; Andrieu, Francois ; Perreau, Pierre ; Marin-Cudraz, David ; Faynot, Olivier ; Cristoloveanu, Sorin ; Gentil, Pierr

Author_Institution

STMicroelectronics Crolles, Crolles, France

fYear

2010

fDate

3-8 Oct. 2010

Firstpage

1

Lastpage

6

Abstract

We investigate the influence of different technological parameters on ESD robustness in advanced FDSOI devices. From Transmission Line Pulse (TLP) measurements, a comparison with other technologies enables us to evaluate the impact of ultrathin film and buried oxide. A solution based on hybrid SOI/bulk co-integration by using Silicon-On-Nothing technology is presented in order to improve ultra-thin film ESD performance.

Keywords

electrostatic discharge; pulse measurement; silicon-on-insulator; ESD protection; advanced FDSOI; buried oxide; fully depleted silicon on insulator technology; hybrid SOI-bulk cointegration; silicon-on-nothing technology; transmission line pulse measurements; ultrathin film; Conductivity; Electric fields; Electrostatic discharge; Leakage current; Logic gates; Robustness; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd

Conference_Location

Reno, NV

Print_ISBN

978-1-58537-182-2

Electronic_ISBN

978-1-58537-182-2

Type

conf

Filename

5623728