DocumentCode
533369
Title
A TLP-based characterization method for transient gate biasing of MOS devices in high-voltage technologies
Author
Willemen, Joost ; Johnsson, David ; Cao, Yiqun ; Stecher, Matthias
Author_Institution
Infineon Technol., Neubiberg, Germany
fYear
2010
fDate
3-8 Oct. 2010
Firstpage
1
Lastpage
10
Abstract
A method to characterize the dynamic behavior of high voltage MOS devices is presented. It utilizes TLP measurements to determine the MOS output characteristics with fixed gate voltages and with floating gates. It characterizes the gate-coupling effect that is defined by the ratio of the device capacitances. This is relevant for design of ESD circuits and compact modelling. Characterization of HV devices in a 0.35um 60V BCD technology illustrates the method.
Keywords
MIS devices; electrostatic discharge; pulse measurement; BCD technology; ESD circuits; MOS devices; TLP measurements; TLP-based characterization method; fixed gate voltages; floating gates; gate-coupling effect; high-voltage technologies; size 0.35 mum; transient gate biasing; voltage 60 V; Capacitance; Current measurement; Logic gates; MOS devices; Pulse measurements; Transient analysis; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location
Reno, NV
Print_ISBN
978-1-58537-182-2
Electronic_ISBN
978-1-58537-182-2
Type
conf
Filename
5623738
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