DocumentCode
533371
Title
On the dynamic destruction of LDMOS transistors beyond voltage overshoots in high voltage ESD
Author
Cao, Yiqun ; Glaser, Ulrich ; Willemen, Joost ; Frei, Stephan ; Stecher, Matthias
Author_Institution
Infineon Technol., Neubiberg, Germany
fYear
2010
fDate
3-8 Oct. 2010
Firstpage
1
Lastpage
10
Abstract
ESD protected LDMOS transistors show sensitivity to voltage overshoots. The pn-diode, nLDMOS and the combination are investigated in detail. The unique failure mode is identified as ongoing triggering of the parasitic bipolar transistor beyond a rise-time-dependent voltage overshoot of the ESD diode. Solutions for enhanced ESD protection are presented.
Keywords
MOSFET; bipolar transistors; electrostatic discharge; semiconductor device reliability; semiconductor diodes; LDMOS transistors; dynamic destruction; failure mode; high voltage ESD; parasitic bipolar transistor; pn-diode; rise-time-dependent voltage overshoot; voltage overshoots; Current measurement; Electrostatic discharge; Logic gates; Semiconductor optical amplifiers; Transient analysis; Transistors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location
Reno, NV
Print_ISBN
978-1-58537-182-2
Electronic_ISBN
978-1-58537-182-2
Type
conf
Filename
5623741
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