Author :
Linten, D. ; Thijs, S. ; Griffoni, A. ; Scholz, M. ; Chen, S.-H. ; Lafonteese, D. ; Vashchenko, V. ; Sawada, M. ; Concannon, A. ; Hopper, P. ; Jansen, P. ; Groeseneken, G.
Abstract :
The extraction of ESD parameters and a Transient Safe Operating Area (TSOA) based on on-wafer HBM-IV measurements with voltage and current waveform capturing are introduced. The HBM parameters provide an easy way to get valuable insights in the transient device operation of ESD protection devices, circuits and their safe operating area under HBM stress conditions.
Keywords :
electrostatic discharge; transient analysis; ESD parameter extraction; ESD protection devices; HBM parameter extraction; HBM stress conditions; TSOA; current waveform capturing; on-wafer HBM-IV measurements; transient device operation; transient safe operating area; voltage waveform capturing; Arrays; Current measurement; Electrostatic discharge; Logic gates; Stress; Thyristors; Voltage measurement;
