DocumentCode
533397
Title
Behavior of RF MEMS switches under ESD stress
Author
Sangameswaran, Sandeep ; De Coster, Jeroen ; Cherman, Vladimir ; Czarnecki, Piotr ; Linten, Dimitri ; Scholz, Mirko ; Thijs, Steven ; Groeseneken, Guido ; De Wolf, Ingrid
fYear
2010
fDate
3-8 Oct. 2010
Firstpage
1
Lastpage
8
Abstract
ESD tests have been performed on RF MEMS capacitive switches in different ambient pressure and environmental conditions. This is done using an integrated measurement setup which can measure out-of-plane displacement as well as current and voltage in the MEMS during an HBM ESD stress event. The effect of ESD on the switch characteristics is investigated.
Keywords
electrostatic discharge; microswitches; ESD tests; HBM ESD stress event; RF MEMS capacitive switches; ambient pressure; integrated measurement setup; out-of-plane displacement; Atmospheric measurements; Current measurement; Electrostatic discharge; Micromechanical devices; Microswitches; Optical switches; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
Conference_Location
Reno, NV
Print_ISBN
978-1-58537-182-2
Electronic_ISBN
978-1-58537-182-2
Type
conf
Filename
5623768
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