• DocumentCode
    533400
  • Title

    TCAD study of the impact of trigger element and topology on silicon controlled rectifier turn-on behavior

  • Author

    Bourgeat, Johan ; Entringer, Christophe ; Galy, Philippe ; Jezequel, Frank ; Bafleur, Marise

  • Author_Institution
    STMicroelectronics, Crolles, France
  • fYear
    2010
  • fDate
    3-8 Oct. 2010
  • Firstpage
    1
  • Lastpage
    10
  • Abstract
    Silicon controlled rectifier (SCR) has a superior ESD performance in terms of power dissipation and saved area compared to classical MOSFET. In this paper, we present 3D TCAD simulations of SCR in CMOS 32nm node. This work focuses on the reduction of the triggering voltage due to the SCR turn-on.
  • Keywords
    CMOS integrated circuits; circuit CAD; technology CAD (electronics); thyristors; 3D TCAD simulations; CMOS node; ESD performance; MOSFET; power dissipation; silicon controlled rectifier turn-on behavior topology; size 32 nm; trigger element; triggering voltage reduction; Integrated circuit modeling; Logic gates; Resistance; Resistors; Stress; Thyristors; Trigger circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Overstress/ Electrostatic Discharge Symposium (EOS/ESD), 2010 32nd
  • Conference_Location
    Reno, NV
  • Print_ISBN
    978-1-58537-182-2
  • Electronic_ISBN
    978-1-58537-182-2
  • Type

    conf

  • Filename
    5623786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=533400