DocumentCode
533717
Title
Metallization on the basis of binary and ternary alloys for submicron elements of MEMS RF-microswitches formation
Author
Chemykh, A.G. ; Tymoshchyk, A.S.
Author_Institution
Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
801
Lastpage
802
Abstract
Features of structure of aluminum metallization on the basis of binary and ternary alloys for submicron elements of MEMS formation are considered. It is shown, that use of ternary alloys Al+Si+Cu and Al+Si+Ho at temperature of a substrate 250-280°C leads to formation of the most fine-grained films of the metallization giving reproducible profiles of anodizing at formation of submicron elements of MEMS RF-microswitches.
Keywords
aluminium alloys; copper alloys; holmium alloys; metallisation; microswitches; silicon alloys; Al-Si-Cu; Al-Si-Ho; MEMS RF-microswitches formation; aluminum metallization; binary alloys; fine-grained films; submicron elements; temperature 250 degC to 280 degC; ternary alloys; Aluminum; Films; Metallization; Micromechanical devices; Microswitches; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632447
Filename
5632447
Link To Document