DocumentCode
533763
Title
Estimation of overheating of p-n junction and its effect on degradation of silicon high-power pulse impatt diodes
Author
Belyaev, E.A. ; Basanets, V.V. ; Boltovets, S.N. ; Zorenko, V.A. ; Konakova, V.R. ; Kolesnik, V.N. ; Kudryk, Y.Y. ; Milenin, V.V. ; Ataubaeva, B.A.
Author_Institution
V. Lashkaryov Inst. of Semicond. Phys., NAS of Ukraine, Kiev, Ukraine
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
171
Lastpage
173
Abstract
The estimation of thermal limitations for pulse operation mode in the 8 mm-wave band of double-drift impact avalanche and transit-time (IMPATT) diodes with microwave power ≥20 W. It is shown that at pulse duration of 300 ns and amplitude of 11.3-15 A; overheating of p-n junction is 270-430°C. The boundary value of temperature of p-n junction at which IMPATT diode degradation begins is found to be 350°C.
Keywords
IMPATT diodes; millimetre wave diodes; p-n junctions; double-drift impact avalanche transit-time diodes; mm-wave band; p-n junction overheating; pulse duration; pulse operation mode; silicon high-power pulse IMPATT diodes; thermal limitations; time 300 ns; Annealing; Copper; Degradation; Metallization; P-n junctions; Semiconductor diodes; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632527
Filename
5632527
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