Impact exerted by fractal pattern of ionized shallow-level donor impurity distribution on specific resistance of active layer of structure of field-effect transistor

It has been found that dependence of specific resistance ρ of the active GaAs layer in Schottky-barrier of structures of the field-effect transistor on width d and length l of the inflow-outflow channel in local approximation at d, l<;L is an indicator of its fractal nature. Reduction of d and l at d, l<;L results in significant increase in ρ. It has been shown that the value of local approximation limit L is an important characteristic of semiconducting material, which defines limits of its applicability for determination of its electric characteristics (specific resistance), as well as limits of its applicability for design of semiconductor devices under given instrumental characteristics.