Title :
Broadband monolitic IC on GaAs heterostructures for time quantized control of amplitude and phase of microwave oscillations with inbuilt driver
Author :
Bogdanov, Y.M. ; Dudinov, K.V. ; Gorbatsevich, A.A. ; Yegorkin, V.I. ; Zemlyakov, V.Y. ; Lapin, V.G. ; Petrov, K.I. ; Sapelnikov, A.N. ; Temnov, A.M. ; Shcherbakov, F.Y.
Author_Institution :
Istok, FSUE, Moscow, Russia
Abstract :
The results of co-developing of industrial design of monolithic integrated circuits of three types with TTL control on the basis of GaAs heterostructures, operating in the frequency range 8,0 - 12 GHz by the teams of specialists of SPE “Istok”, Moscow Institute of Electronic Technology, S. Petersburg Academic University - REC of Nanotechnologies of Russian Academy of Science are presented: 6-bit active phase switcher; 5-bit attenuator; 2-way switch; Switch operation time -10 ns
Keywords :
III-V semiconductors; gallium arsenide; integrated circuit design; monolithic integrated circuits; 2-way switch; 5-bit attenuator; 6-bit active phase switcher; GaAs; GaAs heterostructures; TTL control; broadband monolitic IC; inbuilt driver; industrial design; microwave oscillations; monolithic integrated circuits; time quantized control; Attenuators; Broadband communication; Electronic mail; Gallium arsenide; Nanotechnology; Oscillators; Switches;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632545
