Broadband monolitic IC on GaAs heterostructures for time quantized control of amplitude and phase of microwave oscillations with inbuilt driver

Author

Bogdanov, Y.M. ; Dudinov, K.V. ; Gorbatsevich, A.A. ; Yegorkin, V.I. ; Zemlyakov, V.Y. ; Lapin, V.G. ; Petrov, K.I. ; Sapelnikov, A.N. ; Temnov, A.M. ; Shcherbakov, F.Y.

Author_Institution

Istok, FSUE, Moscow, Russia

fYear

2010

fDate

13-17 Sept. 2010

Firstpage

189

Lastpage

190

Abstract

The results of co-developing of industrial design of monolithic integrated circuits of three types with TTL control on the basis of GaAs heterostructures, operating in the frequency range 8,0 - 12 GHz by the teams of specialists of SPE “Istok”, Moscow Institute of Electronic Technology, S. Petersburg Academic University - REC of Nanotechnologies of Russian Academy of Science are presented: 6-bit active phase switcher; 5-bit attenuator; 2-way switch; Switch operation time -10 ns

Keywords

III-V semiconductors; gallium arsenide; integrated circuit design; monolithic integrated circuits; 2-way switch; 5-bit attenuator; 6-bit active phase switcher; GaAs; GaAs heterostructures; TTL control; broadband monolitic IC; inbuilt driver; industrial design; microwave oscillations; monolithic integrated circuits; time quantized control; Attenuators; Broadband communication; Electronic mail; Gallium arsenide; Nanotechnology; Oscillators; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-7184-3

Type

conf

DOI

10.1109/CRMICO.2010.5632545

Filename

5632545