DocumentCode
533787
Title
NDC of diodes with tunnel and resonant-tunneling borders
Author
Prokhorov, E.D. ; Botsula, O.V.
Author_Institution
Kharkov Nat. Univ., Kharkov, Ukraine
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
218
Lastpage
219
Abstract
The diodes, in which negative differential conductivity (NDC) arises at certain stresses between ohmic contacts owe to tunneling or resonant tunneling of electrons through lateral borders of the diode, are considered, and their current-voltage characteristics are determined in the present paper.
Keywords
ohmic contacts; resonant tunnelling diodes; tunnelling; NDC; current-voltage characteristic; diodes; electron tunneling; negative differential conductivity; ohmic contact; resonant-tunneling border; Conductivity; Current-voltage characteristics; Gallium arsenide; Mathematical model; Resonant tunneling devices; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632567
Filename
5632567
Link To Document