DocumentCode
533935
Title
Ballistic transport in triple-barrier structures in two frequency electric field
Author
Pashkovskii, A.B.
Author_Institution
Fed. State Unitary Corp. R&PC Istok, Fryazino, Russia
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
882
Lastpage
883
Abstract
For asymmetric triple-barrier resonant-tunneling structures with thin and high (delta) barriers, the closed form of solution of Schrödinger equation describing the resonant transitions between three quantum levels in the single-frequency high electric field has been generalized for the case of double-frequency field. It is shown that for each structure there are conditions when the majority of electrons falling on the upper energy level might emit two photons and then leave the structure without intermediate electron-phonon interaction.
Keywords
Schrodinger equation; ballistic transport; resonant tunnelling; Schrodinger equation; asymmetric triple-barrier resonant-tunneling structures; ballistic transport; closed form; double-frequency field; high barriers; intermediate electron-phonon interaction; quantum levels; resonant transitions; single-frequency high electric field; thin barriers; two frequency electric field; upper energy level; Charge carrier processes; Electric fields; Electronic mail; Equations; Reflection; Resonant frequency; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632737
Filename
5632737
Link To Document