Title :
Interference effects in double-barrier structures in high frequency electric fields
Author :
Golant, E.I. ; Kapralova, A.A. ; Lukashin, V.M. ; Pashkovskii, A.B.
Author_Institution :
R&PC Istok, Fed. State Unitary Corp., Fryazino, Russia
Abstract :
For asymmetric double-barrier resonant-tunneling structures with thin and high (delta) barriers, the dependences of the widths of resonance levels on amplitude of intensive high frequency electric field and peculiarities of electron transport near centers of the resonance levels have been investigated. It has been observed that the non-resonance scattering channel might be absolutely transparent and level widths might substantially exceed their low-signal values.
Keywords :
resonant tunnelling; asymmetric double-barrier resonant-tunneling structures; electron transport; high barriers; intensive high frequency electric field amplitude; interference effects; low-signal values; nonresonance scattering channel; resonance level widths; thin barriers; Electric fields; Electronic mail; Interference; Resonant frequency; Tunneling;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632740
