DocumentCode :
533954
Title :
Study of resistance of low-noise amplifier based on GaN PHEMT, to input microwave power
Author :
Antonova, N.E. ; Zemliakov, V.E. ; Krutov, A.V. ; Rebrov, A.S.
Author_Institution :
FSUE RPC "Istok", Fryazino, Russia
fYear :
2010
fDate :
13-17 Sept. 2010
Firstpage :
942
Lastpage :
943
Abstract :
Development and practical realization results of low noise amplifiers robust to input microwave power are presented. The measured parameters are shown.
Keywords :
III-V semiconductors; electrical resistivity; field effect MMIC; gallium compounds; high electron mobility transistors; low noise amplifiers; wide band gap semiconductors; GaN; PHEMT; input microwave power; low-noise amplifier; resistance; Gallium nitride; Microwave amplifiers; Microwave circuits; Microwave measurements; PHEMTs; Robustness; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
Type :
conf
DOI :
10.1109/CRMICO.2010.5632758
Filename :
5632758
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=533954
بازگشت