• DocumentCode
    533976
  • Title

    Radiation effects in microwave devices based on Gallium nitride

  • Author

    Gromov, D.V.

  • Author_Institution
    Moscow Eng. Phys. Inst., Nat. Res. Nucl. Univ., Moscow, Russia
  • fYear
    2010
  • fDate
    13-17 Sept. 2010
  • Firstpage
    932
  • Lastpage
    933
  • Abstract
    The review of radiation effects on GaN microwave semiconductor devices is presented.
  • Keywords
    gallium compounds; microwave devices; radiation effects; GaN; gallium nitride; microwave semiconductor device; radiation effect; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Protons; Radiation effects; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-7184-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2010.5632782
  • Filename
    5632782
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=533976