DocumentCode
533991
Title
A 2–4 GHz 25W and 50W GaN power amplifiers
Author
Kishchinskiy, A.A. ; Nikiti, D.V.
Author_Institution
JSC Microwave Syst., Moscow, Russia
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
105
Lastpage
106
Abstract
Results of design and experimental investigations of two models (25W and 50W) 2-4 GHz GaN-based amplifiers are presented in this article.
Keywords
power amplifiers; GaN-based amplifier; frequency 2 GHz to 4 GHz; power 25 W; power 50 W; power amplifier; Electronic mail; Gain; Gallium arsenide; Gallium nitride; HEMTs; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632804
Filename
5632804
Link To Document