Title :
Molecular single-electron transistor on basis of planar nanostructure
Author :
Kolesov, V.V. ; Sapkov, I.V. ; Soldatov, E.S.
Author_Institution :
Inst. of Radioengineering & Electron., RAS, Moscow, Russia
Abstract :
The investigation of the effects of correlated tunneling in the molecular nanostructures at room temperatures has been carried out. The model of molecular single-electron transistor on the basis of planar techniques has been developed.
Keywords :
molecular electronics; nanostructured materials; single electron transistors; tunnelling; correlated tunneling; molecular nanostructure; molecular single-electron transistor; planar nanostructure; planar technique; temperature 293 K to 298 K; Electrodes; Physics; Production; Sensitivity; Single electron transistors; Transistors; Voltage measurement;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
DOI :
10.1109/CRMICO.2010.5632918
