DocumentCode
534059
Title
Molecular single-electron transistor on basis of planar nanostructure
Author
Kolesov, V.V. ; Sapkov, I.V. ; Soldatov, E.S.
Author_Institution
Inst. of Radioengineering & Electron., RAS, Moscow, Russia
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
857
Lastpage
858
Abstract
The investigation of the effects of correlated tunneling in the molecular nanostructures at room temperatures has been carried out. The model of molecular single-electron transistor on the basis of planar techniques has been developed.
Keywords
molecular electronics; nanostructured materials; single electron transistors; tunnelling; correlated tunneling; molecular nanostructure; molecular single-electron transistor; planar nanostructure; planar technique; temperature 293 K to 298 K; Electrodes; Physics; Production; Sensitivity; Single electron transistors; Transistors; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632918
Filename
5632918
Link To Document