Simulation of transfer processes in solid-state heterojunction structures with space-charge waves

Author

Murav´ev, V.V. ; Tamelo, A.A. ; Mishenko, V.N. ; Molodkin, D.F.

Author_Institution

Belarusian State Univ. Inf. & Radioelectron., Minsk, Belarus

fYear

2010

fDate

13-17 Sept. 2010

Firstpage

865

Lastpage

866

Abstract

On the basis of a method of statistical modeling investigations of basic mechanisms of dispersion in semiconductor heterostructures and basic characteristics of a physical process of carrier transfer in a mode with occurrence of plasma waves are carried out. Novelty consists in statistical modeling and self-co-ordinated solution of Schroedinger equation. It all allows revealing of basic physical mechanisms, determining the increase of propagation velocity of plasma waves, and defining of requirements of a choice of electrophysical parameters of heterostructures for production of oscillations in the millimetric range.

Keywords

Schrodinger equation; plasma waves; semiconductor heterojunctions; space charge waves; Schroedinger equation; carrier transfer; heterostructure electrophysical parameters; plasma waves; self-co-ordinated solution; semiconductor heterostructures; solid-state heterojunction structures; space-charge waves; statistical modeling; transfer processes simulation; Boltzmann equation; Gallium arsenide; Mathematical model; Monte Carlo methods; Plasma waves; Plasmas; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4244-7184-3

Type

conf

DOI

10.1109/CRMICO.2010.5632930

Filename

5632930