DocumentCode :
534070
Title :
Simulation of transfer processes in solid-state heterojunction structures with space-charge waves
Author :
Murav´ev, V.V. ; Tamelo, A.A. ; Mishenko, V.N. ; Molodkin, D.F.
Author_Institution :
Belarusian State Univ. Inf. & Radioelectron., Minsk, Belarus
fYear :
2010
fDate :
13-17 Sept. 2010
Firstpage :
865
Lastpage :
866
Abstract :
On the basis of a method of statistical modeling investigations of basic mechanisms of dispersion in semiconductor heterostructures and basic characteristics of a physical process of carrier transfer in a mode with occurrence of plasma waves are carried out. Novelty consists in statistical modeling and self-co-ordinated solution of Schroedinger equation. It all allows revealing of basic physical mechanisms, determining the increase of propagation velocity of plasma waves, and defining of requirements of a choice of electrophysical parameters of heterostructures for production of oscillations in the millimetric range.
Keywords :
Schrodinger equation; plasma waves; semiconductor heterojunctions; space charge waves; Schroedinger equation; carrier transfer; heterostructure electrophysical parameters; plasma waves; self-co-ordinated solution; semiconductor heterostructures; solid-state heterojunction structures; space-charge waves; statistical modeling; transfer processes simulation; Boltzmann equation; Gallium arsenide; Mathematical model; Monte Carlo methods; Plasma waves; Plasmas; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7184-3
Type :
conf
DOI :
10.1109/CRMICO.2010.5632930
Filename :
5632930
Link To Document :
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