DocumentCode
534074
Title
AlGaN/GaN two-stage power amplifier of X-band
Author
Glazunov, V. ; Guljaev, V. ; Zykova, G. ; Mjakichev, J. ; Chaly, V.
Author_Institution
JSC Oktava, Novosibirsk, Russia
fYear
2010
fDate
13-17 Sept. 2010
Firstpage
115
Lastpage
116
Abstract
The results of development of “quasi-monolithic” two-stage power amplifier within 9-10.5 GHz bandwidth with output power in the saturation mode more than 4.0W at gain coefficient of 12.5-13 dB are presented. The experimental characteristics of designed amplifier are given.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; microwave power amplifiers; wide band gap semiconductors; AlGaN-GaN; X-band; bandwidth 9 GHz to 10.5 GHz; gain 12 dB to 13.5 dB; quasimonolithic two-stage power amplifier; saturation mode; Aluminum gallium nitride; Electronic mail; Gallium nitride; Logic gates; Power amplifiers; Power generation; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2010 20th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4244-7184-3
Type
conf
DOI
10.1109/CRMICO.2010.5632934
Filename
5632934
Link To Document