Thermal modeling and measurements of AlGaN/GaN HEMTs including Thermal Boundary Resistance

Author

Sommet, Raphaël ; Mouginot, Guillaume ; Quéré, Raymond ; Ouarch, Zineb ; Heckmann, Sylvain ; Camiade, Marc

Author_Institution

XLIM, Univ. de Limoges, Brive-la-Gaillarde, France

fYear

2010

fDate

6-8 Oct. 2010

Firstpage

1

Lastpage

5

Abstract

In this paper an analysis of thermal behavior of microwave power AlGaN/GaN HEMTs has been carried out through pulsed current-voltage (PIV) measurements and S parameters. A special care about trapping effects has been followed where it is shown Error! Reference source not found. that the thermal resistance of the device can be accurately determined provided that some assumptions on the trapping behavior of the device are verified. The values obtained have been checked by three dimensional finite element (3D-FE) simulations. Finally, the Thermal Boundary Resistance (TBR) between GaN/SiC has been extracted and compared to literature. The results we have obtained are in line with what can be found.

Keywords

finite element analysis; high electron mobility transistors; thermal analysis; AlGaN-GaN; HEMT; high electron mobility transistors; microwave power; pulsed current-voltage measurement; thermal behavior; thermal boundary resistance; thermal modeling; three dimensional finite element simulation; trapping behavior; trapping effect; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Temperature measurement; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermal Investigations of ICs and Systems (THERMINIC), 2010 16th International Workshop on

Conference_Location

Barcelona

Print_ISBN

978-1-4244-8453-9

Type

conf

Filename

5636300