Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method

Author

Chi-Sun Hwang ; Sang-Hee Ko Park ; Himchan Oh ; Min-Ki Ryu ; Kyoung-Ik Cho ; Sung-Min Yoon

Author_Institution

Electron. & Telecommun. Res. Inst., Oxide TFT Res. Team, Daejeon, South Korea

Volume

35

Issue

3

fYear

2014

fDate

Mar-14

Firstpage

360

Lastpage

362

Abstract

Vertical channel ZnO thin-film transistors (TFTs) were fabricated on glass and flexible substrates. Conformally deposited thin films prepared using atomic layer deposition were used for the active layer, gate insulator, and gate electrode. Owing to the very short channel (0.5 μm) and very thin (20 nm) gate insulator layer, the ON-current of the vertical channel ZnO TFT was 57 μA at the gate and drain voltages of 3 and 4 V, respectively. Vertical channel oxide TFTs may be promising for device applications with low power consumption.

Keywords

II-VI semiconductors; atomic layer deposition; electrodes; insulators; low-power electronics; thin film transistors; wide band gap semiconductors; zinc compounds; TFT; ZnO; active layer; atomic layer deposition; current 57 muA; flexible substrates; gate electrode; gate insulator; glass substrates; low power consumption; size 0.5 mum; size 20 nm; thin film transistors; vertical channel oxide; voltage 3 V; voltage 4 V; Aluminum oxide; Glass; Logic gates; Substrates; Thin film transistors; Zinc oxide; In-Ga-Zn-O (IGZO); Oxide semiconductor; thin-film transistor (TFT); vertical channel;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2296604

Filename

6705629