DocumentCode
535581
Title
High power 1100-nm InGaAs/GaAs quantum dot lasers
Author
Pavelescu, E.-M. ; Gilfert, C. ; Danila, M. ; Dinescu, A. ; Reithmaier, J.P.
Author_Institution
Nat. Inst. for R&D in Microtechnol., Bucharest, Romania
Volume
01
fYear
2010
fDate
11-13 Oct. 2010
Firstpage
173
Lastpage
176
Abstract
1100-nm InGaAs/(Al)GaAs quantum dots laser material was developed with relatively low In content of 28% and an appropriate laser design to allow for high power applications. In comparison to a InGaAs QD laser with similar design but higher In content of 60% the newly developed laser exhibits an improved internal quantum efficiency and temperature stability of the threshold current.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser stability; quantum dot lasers; InGaAs-GaAs; high power applications; internal quantum efficiency; laser design; quantum dot lasers; temperature stability; threshold current; wavelength 1100 nm; Cavity resonators; Power lasers; Quantum dot lasers; Temperature; Vertical cavity surface emitting lasers; InGaAs quantum dots; high power semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2010 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-5783-0
Type
conf
DOI
10.1109/SMICND.2010.5649056
Filename
5649056
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