Emission efficiency of crystalline and amorphous Si nanoclusters

Author

Torchynska, T.V.

Author_Institution

ESFM - Nat. Polytech. Inst., Mexico City, Mexico

Volume

01

fYear

2010

fDate

11-13 Oct. 2010

Firstpage

99

Lastpage

102

Abstract

The paper presents the results of emission efficiency comparison in crystalline and amorphous Si nanoclustes. Using X-ray diffraction (XRD) and photoluminescence (PL) methods the correlation between different PL bands and the volumes of Si nanocrystals and an amorphous (a-Si:H) phase have been revealed The size parameters of amorphous (a-Si:H) nanoclusters (quantum dots) and Si nanocrystals have been estimated from PL study and have been compared in the last case with that obtained by the XRD method. Using PL results the ratio between emission efficiencies for crystalline (η_cr) and amorphous (η_am) nanoclusters has been obtained and discussed.

Keywords

X-ray diffraction; amorphous semiconductors; elemental semiconductors; hydrogen; nanostructured materials; photoluminescence; semiconductor quantum dots; silicon; Si:H; X-ray diffraction; XRD; a-Si:H; amorphous nanoclusters; crystalline nanoclusters; emission efficiency; photoluminescence; quantum dots; size parameters; Films; Nanocrystals; Quantum dots; Silicon; Temperature measurement; X-ray diffraction; X-ray scattering; X-ray diffraction; emission efficiency; silicon crystalline and amorphous nanoclusters;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference (CAS), 2010 International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-5783-0

Type

conf

DOI

10.1109/SMICND.2010.5650229

Filename

5650229