Title :
V-shape through wafer via manufactured by drie variable isotropy process
Author :
Vasilache, D. ; Colpo, S. ; Ronchin, S. ; Giacomozzi, F. ; Margesin, B.
Author_Institution :
FBK-irst Trento, Trento, Italy
Abstract :
A new process for through-wafer interconnects was studied by our group. This new process was developed to facilitate metallised through wafer via holes manufacturing. V-shape profile can contribute to an easier metallisation process and better adhesion. Manufacturing process use the possibility to change the isotropy in the Deep Reactive Ion Etching (DRIE) equipments from anisotropic to completely isotropic. Two slightly different processes were used in order optimize the technology and to see the changes introduced by isotropic/anisotropic processes sequence.
Keywords :
adhesion; interconnections; metallisation; semiconductor device manufacture; sputter etching; DRIE variable isotropy process; V-shape through wafer via; adhesion; deep reactive ion etching; metallisation; through-wafer interconnects; wafer via holes manufacturing; Adhesives; Etching; Oxidation; Passivation; Plasmas; Silicon; DRIE; through silicon via; variable isotropy process;
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-5783-0
DOI :
10.1109/SMICND.2010.5650440