DocumentCode
535771
Title
Sub-micron FBAR modeling including FEM simulations
Author
Stefanescu, A. ; Neculoiu, D. ; Konstantinidis, G. ; Cismaru, A. ; Deligeorgis, G. ; Stavrinidis, A. ; Muller, A.
Author_Institution
IMT Bucharest, Bucharest, Romania
Volume
01
fYear
2010
fDate
11-13 Oct. 2010
Firstpage
257
Lastpage
260
Abstract
Analytical and finite element models of sub-micron Film Bulk Acoustic Resonator (FBAR) based on GaN are reported. The analytical modelling is based on Mason´s model for three composite layer FBAR structure. The numerical modelling shows good agreement with theoretical and experimental results previously obtained on FBAR operating around 6 GHz.
Keywords
III-V semiconductors; acoustic resonators; finite element analysis; gallium compounds; wide band gap semiconductors; FEM simulations; GaN; film bulk acoustic resonator; finite element models; numerical modelling; submicron FBAR modeling; Analytical models; Electrodes; Film bulk acoustic resonators; Finite element methods; Gallium nitride; Numerical models; Resonant frequency; FBAR; FEM simulation; Mason´s model;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2010 International
Conference_Location
Sinaia
ISSN
1545-827X
Print_ISBN
978-1-4244-5783-0
Type
conf
DOI
10.1109/SMICND.2010.5650610
Filename
5650610
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