DocumentCode :
535773
Title :
Impact of light quantum in Rapid Photothermal Diffusion of Zn IN GaAs
Author :
Shishiyanu, S.T. ; Shishiyanu, T.S.
Author_Institution :
Dept. of Microelectron. & Semicond. Devices, Tech. Univ. of Moldova, Chisinau, Moldova
Volume :
01
fYear :
2010
fDate :
11-13 Oct. 2010
Firstpage :
251
Lastpage :
254
Abstract :
The experimental results of the Rapid Photothermal Diffusion (RPD) of Zn in GaAs and p-n junction formation, model and role of quantum factor in this process are presented in this paper. The p-n junctions with depth of 0.2-1.2μm have been obtained by RPD at 600-950°C for 6-60s diffusion time for solar cells and microelectronic application. The diffusion coefficients and activation energies of the RP-enhanced diffusion at low (N0<;4×1019 cm-3) and high (N0>1×1020 cm-3) concentrations of Zn in GaAs were analysed. The activation energy of RP-diffusion is lower than that of the conventional furnace diffusion and diffusion coefficient is higher by 1-2 orders of magnitude. The proposed model and calculated wavelength dependence of RP-diffusion coefficient, D(λ), are in accordance with experimental results.
Keywords :
III-V semiconductors; diffusion; gallium arsenide; p-n junctions; photothermal effects; rapid thermal processing; zinc; GaAs:Zn; activation energies; depth 0.2 mum to 1.2 mum; diffusion coefficients; diffusion time; light quantum; microelectronic application; p-n junction formation; quantum factor; rapid photothermal diffusion; solar cells; temperature 600 degC to 950 degC; time 6 s to 60 s; Furnaces; Gallium arsenide; Mathematical model; P-n junctions; Photovoltaic cells; Temperature dependence; Zinc; GaAs; Rapid Photothermal Processing; Zn enhanced diffusion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2010 International
Conference_Location :
Sinaia
ISSN :
1545-827X
Print_ISBN :
978-1-4244-5783-0
Type :
conf
DOI :
10.1109/SMICND.2010.5650620
Filename :
5650620
Link To Document :
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