Compact Capacitance Model for OTFTs at Low and Medium Frequencies

Author

Castro-Carranza, Alejandra ; Estrada, M. ; Cerdeira, Antonio ; Nolasco, Jairo C. ; Sanchez, Javier ; Marsal, Lluis F. ; Iniguez, B. ; Pallares, J.

Author_Institution

Electron. Eng. Dept., Univ. Rovira i Virgili, Tarragona, Spain

Volume

61

Issue

2

fYear

2014

fDate

Feb. 2014

Firstpage

638

Lastpage

642

Abstract

We present a compact capacitance model for organic thin-film transistors (OTFTs), which is valid not only in the accumulation regime but also in the partial and total depletion regimes. The parameters applied in the model are analytically extracted from the current-voltage characteristics of the devices, using a previously developed unified model and the parameter extraction method. The overlap capacitance effect is taken into account, and the frequency dependence is considered empirically by means of the insulator permittivity. Comparisons between modeled and experimental gate-to-channel capacitances of staggered upper contact p-channel OTFTs based on P3HT-PMMA and PCDTBT-PMMA show the validity of the model at low and medium frequencies.

Keywords

permittivity; thin film transistors; P3HT-PMMA; PCDTBT-PMMA; accumulation regime; compact capacitance model; current-voltage characteristics; frequency dependence; gate-to-channel capacitances; insulator permittivity; low frequencies; medium frequencies; organic thin-film transistors; parameter extraction method; partial regimes; staggered upper contact p-channel OTFT; total depletion regimes; Capacitance; Insulators; Integrated circuit modeling; Logic gates; Organic thin film transistors; Capacitance model; field-effect transistor (FET); organic semiconductor; organic thin-film transistor (OTFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2295772

Filename

6705645