DocumentCode :
53835
Title :
Novel Gate-All-Around High-Voltage Thin-Film Transistor With T-Shaped Metal Field Plate Design
Author :
Jhen-Yu Tsai ; Hsin-Hui Hu
Author_Institution :
Dept. of Electron. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
Volume :
62
Issue :
3
fYear :
2015
fDate :
Mar-15
Firstpage :
882
Lastpage :
887
Abstract :
A novel gate-all-around (GAA) high-voltage thin-film transistor (HVTFT) with the T-shaped metal field plate (MFP) design results in a high breakdown voltage (VBD) of 119.9 V and a low specific ON-resistance (RSP) of 8.4 mQ · cm2. This T-shaped MFP GAA HVTFT solves the VBD-RSP tradeoff problems and exhibits superior gate control performance, which leads to excellent electrical characteristics such as a better ON/OFF ratio of >1010 and a lower subthreshold slope of 154.4 mV/decade than the conventional planar structure.
Keywords :
electric breakdown; thin film transistors; GAA HVTFT; MFP design; T-shaped metal field plate design; VBD-RSP tradeoff problem; breakdown voltage; gate-all-around high-voltage thin-film transistor; low specific ON-resistance; planar structure; superior gate control performance; voltage 119.9 V; Computational modeling; Electric breakdown; Logic gates; Metals; Semiconductor process modeling; Thin film transistors; Gate-all-around (GAA); high-voltage thin-film transistor (HVTFT); metal field plate (MFP); metal field plate (MFP).;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2395878
Filename :
7031875
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=53835
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