Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

Author

Sangheon Lee ; Daeseok Lee ; Jiyong Woo ; Euijun Cha ; Jaesung Park ; Hyunsang Hwang

Author_Institution

Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

Volume

35

Issue

10

fYear

2014

fDate

Oct. 2014

Firstpage

1022

Lastpage

1024

Abstract

The resistive switching behaviors of selector-less resistive random access memory (ReRAM) have been extensively investigated to eliminate the tradeoff between selectivity and reliability. To achieve excellent selectivity, reliability should be sacrificed, and vice versa. The reason for this tradeoff is the narrow read operation margin of ReRAM having high selectivity. Therefore, the role of each layer has been analyzed and engineered to satisfy both selectivity and reliability requirements of the ReRAM. In the selector-less ReRAM, oxygen vacancies of the switching layer control set voltage for achieving high read operation margin, whereas oxygen vacancies of the tunnel barrier control selectivity.

Keywords

integrated circuit reliability; random-access storage; engineering oxygen vacancy; high-read operation margin; narrow read operation margin; resistive random access memory; resistive switching behavior; selectorless ReRAM reliability; selectorless ReRAM selectivity; switching layer; switching layer control set voltage; tunnel barrier control selectivity; Hafnium compounds; Reliability engineering; Reservoirs; Switches; Tunneling; ReRAM; reliability; selectivity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2347925

Filename

6891220