DocumentCode
539403
Title
A cost-effective alternative to moisture monitoring in epitaxial silicon processing
Author
Alfonso, Theodore F. ; Branecky, Cary ; Ayad, Tamir F.
Author_Institution
ST Microelectronics, Carrollton, TX, USA
fYear
2008
fDate
27-29 Oct. 2008
Firstpage
223
Lastpage
226
Abstract
In-line process characterization is an important part of any semiconductor manufacturing operation. In today´s manufacturing environment, process and equipment engineers are often challenged to find cost-effective alternatives to expensive contamination monitoring equipment. In the epitaxial silicon manufacturing process, the periodic monitoring of the oxide etch rate has shown to reveal the presence of atmosphere that would otherwise have required a sophisticated monitoring system. The early indication of atmospheric encroachment through oxide etch rate monitoring has allowed intervention and repair prior to scrap or yield impacting events.
Keywords
Atmosphere; Epitaxial growth; Inductors; Manufacturing; Monitoring; Process control; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing (ISSM), 2008 International Symposium on
Conference_Location
Tokyo, Japan
ISSN
1523-553X
Electronic_ISBN
1523-553X
Type
conf
Filename
5714924
Link To Document