Productivity improvement for a Zr-base high-k film deposition using thermal chamber cleaning technique

We have proposed that BCl3-2%O2 gas mixture was useful for the high-k chamber cleaning because of sufficient etching rate of 30 nm/min. It was clarified that residuals such as B and Cl originating from the etching gas do not remain on the surface after etching, and that there was no damage to the SiO2 (quartz) surface. When compared to wet cleaning downtime, this new dry cleaning method is able to drastically reduce it to 1/8.