A high performance V-band low noise amplifier using thin-film microstrip (TFMS) lines in 0.13 µm CMOS technology

A 60 GHz low noise amplifier (LNA) in standard 0.13 μm CMOS process is demonstrated. A shunted inductor is applied to resonate out the parasitic capacitor at the drain node of the first common source stage which effectively reduce the NF and enhance gain. This thin-film microstrip LNA achieves a measured power gain of 15.8 dB, a noise figure of 5.71 dB, an output 1-dB compression point (OP1dB) of 1.13 dBm, and an input third-order inter-modulation point (IIP3) of -4.8 dBm at 60 GHz. The chip area with pads is 0.42 mm² and the power consumption is 43.3 mW.