Title :
A high performance V-band low noise amplifier using thin-film microstrip (TFMS) lines in 0.13 µm CMOS technology
Author :
Chiou, Hwann-Kaeo ; Lee, Kuan-Zung ; Wu, Shang-Ju
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Abstract :
A 60 GHz low noise amplifier (LNA) in standard 0.13 μm CMOS process is demonstrated. A shunted inductor is applied to resonate out the parasitic capacitor at the drain node of the first common source stage which effectively reduce the NF and enhance gain. This thin-film microstrip LNA achieves a measured power gain of 15.8 dB, a noise figure of 5.71 dB, an output 1-dB compression point (OP1dB) of 1.13 dBm, and an input third-order inter-modulation point (IIP3) of -4.8 dBm at 60 GHz. The chip area with pads is 0.42 mm2 and the power consumption is 43.3 mW.
Keywords :
CMOS integrated circuits; capacitors; low noise amplifiers; microstrip lines; thin film devices; CMOS technology; V-band low noise amplifier; frequency 60 GHz; gain 15.8 dB; input third-order inter-modulation point; noise figure; noise figure 5.71 dB; output 1-dB compression point; parasitic capacitor; power 43.3 mW; shunted inductor; size 0.13 mum; thin-film microstrip lines; thin-film microstrip low noise amplifier; CMOS integrated circuits; CMOS technology; Gain; Lead; Millimeter wave technology; Noise measurement; Topology; CMOS; Low noise amplifier (LNA); V-band; microstrip (TFMS); millimeter-wave; thin-film;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2