Title :
10 Gb/s Error-Free Operation of All-Silicon Ion-Implanted-Waveguide Photodiodes at 1.55
Author :
Grote, Richard R. ; Padmaraju, Kishore ; Souhan, Brian ; Driscoll, Jeffrey B. ; Bergman, Keren ; Osgood, Richard M., Jr.
Author_Institution :
Dept. of Electr. & Comput. Eng., Columbia Univ., New York, NY, USA
Abstract :
The error-free operation of an all-Si ion-implanted CMOS-compatible waveguide p-i-n photodiode (PD) is experimentally demonstrated at 1.55 μm with 2.5 and 10 Gb/s data rates. Detector sensitivity as a function of bias voltage is measured for PDs of two different lengths, 250 μm and 3 mm. The photocurrent increase caused by bringing the PD into a highly absorbing state via forward biasing is also measured, and it is shown that a resulting 15 dB improvement in receiver sensitivity can be expected. The limiting factors of the device frequency response are analyzed, and the measured PDs are shown to have comparable dark currents, responsivities, and sensitivities to reported Ge PDs.
Keywords :
CMOS integrated circuits; frequency response; integrated optoelectronics; ion implantation; optical receivers; optical waveguides; p-i-n photodiodes; photoconductivity; photodetectors; silicon-on-insulator; PD; Si; all-silicon ion-implanted CMOS-compatible waveguide p-i-n photodiode; bias voltage; bit rate 10 Gbit/s; bit rate 2.5 Gbit/s; dark currents; data rates; detector sensitivity; device frequency response; error-free operation; forward biasing; highly absorbing state; limiting factors; photocurrent; receiver sensitivity; size 250 mum; size 3 mm; wavelength 1.55 mum; Absorption; Capacitance; Optical waveguides; Photodiodes; Photonics; Sensitivity; Silicon; Integrated optoelectronics; optical receivers; photodiodes; silicon;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2012.2223664