Title :
Measurement of integrated PA-to-LNA isolation on Si CMOS chip
Author :
Minami, Ryo ; Hong, JeeYoung ; Imanishi, Daisuke ; Okada, Kenichi ; Matsuzawa, Akira
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
This paper shows measurement results of on-chip coupling between PA and LNA integrated on Si CMOS substrate, which is caused by substrate coupling, magnetic coupling, wire coupling, etc. These components are decomposed by measurements using diced chips. The result reveals that the substrate coupling is most dominant in CMOS chips and the total isolation becomes less than -50 dB with more than 0.4 mm PA-to-LNA distance.
Keywords :
CMOS analogue integrated circuits; elemental semiconductors; low noise amplifiers; power amplifiers; silicon; CMOS chip; diced chips; integrated PA-to-LNA isolation measurement; magnetic coupling; on-chip coupling; substrate coupling; wire coupling; Couplings; Inductors; Noise; Noise measurement; Probes; Semiconductor device measurement; Substrates; CMOS amplifiers; Duplexers; Mutual coupling; Tx leakage; electromagnetic coupling; substrate coupling;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
