Title :
A DC to 4 GHz fully differential wideband digitally controlled Variable Gain Amplifier
Author :
Kumar, Thangarasu Bharatha ; Ma, Kaixue ; Yeo, Kiat Seng ; Mou, Shouxian ; Nagarajan, Mahalingam ; Gu, Jiangmin ; Lim, Kok Meng ; Lu, Yang ; Yu, Hao
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A Variable Gain and Attenuation control Amplifier (VGA) operating with low power, wide bandwidth and large Gain range for interfacing 60GHz RF front-end to Digital Baseband processor has been designed in 180nm SiGe BiCMOS technology from Jazz Semiconductor. The VGA is implemented using two stage amplifier followed by a Buffer stage with additional Diode linearizer for improving the input referred 1dB compression point. The performance parameters of the proposed VGA is been simulated and achieves a Gain range of -10dB to +10dB with 3-dB Bandwidth of greater than 4GHz. This VGA topology has good input and output matching. The complete circuit consumes about 9mW power from a DC 1.8V supply and the Core circuit (excluding I/O Pads) occupies a chip area of 170μm × 60μm.
Keywords :
BiCMOS integrated circuits; amplifiers; silicon compounds; SiGe BiCMOS technology; attenuation control amplifier; bandwidth 4 GHz; buffer stage; digital baseband processor; diode linearizer; frequency 60 GHz; fully differential wideband digitally controlled variable gain amplifier; input matching; jazz semiconductor; output matching; power 9 mW; two stage amplifier; voltage 1.8 V; Bandwidth; Baseband; CMOS integrated circuits; Gain; Gain control; Layout; Receivers; 60GHz; Digital controlled VGA; SiGe BiCMOS; Variable Gain Amplifier;
Conference_Titel :
Microwave Conference Proceedings (APMC), 2010 Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-1-4244-7590-2
Electronic_ISBN :
978-1-902339-22-2
